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HN7G07FU
TOSHIBA Multichip Discrete Device
HN7G07FU
Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications
* Combining transistor and BRT reduces the parts count, enabling the design of more compact equipment with a simpler system configuration. Q1: 2SC5376F equivalent Q2: RN1115F equivalent Unit: mm
Q1 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 15 12 5 500 50 Unit V V V mA mA
1.EMITTER1 2.BASE1 3.COLLECTOR2 4.EMITTER2 5.BASE2 6.COLLECTOR1
(E1) (B1) (C2) (E2) (B2) (C1)
Q2 Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA
JEDEC JEITA TOSHIBA
2-2J1A
Weight: 0.0068 g (typ.)
Marking
Type Name hFE Rank 75A
Q1, Q2 Common Ratings (Ta = 25C)
Characteristic Collector power dissipation Junction temperature Storage temperature range Symbol PC* Tj Tstg Rating 200 150 -55~150 Unit mW C C
Equivalent Circuit
(top view)
6
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Total rating. 130 mW per element should not be exceeded.
Note:
5
4
Q2 Q1
1
2
3
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HN7G07FU
Q1 Electrical Characteristics (Ta = 25C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO hFE ** VCE (sat) (1) VCE (sat) (2) VBE (sat) fT Cob ton 0V Switching time Storage time tstg INPUT 300 10 s 600 50 Test Condition VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 10 mA IC = 10 mA, IB = 0.5 mA IC = 200 mA, IB = 10 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz OUTPUT 60 Min 300 Typ. 15 110 0.87 130 4.2 85 Max 100 100 1000 30 250 1.2 mV V MHz pF ns Unit nA nA
VCC = 6 V
170
ns
VBB = 3 V Fall time tf Duty cycle < 2% = IB1 = IB2 = 5 mA 40 ns
**: hFE Classification
A:300~600, B:500~1000
Q2 Electrical Characteristics (Ta = 25C)
Characteristic Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio Symbol ICBO ICEO IEBO hFE VCE (sat) VI(ON) VI(OFF) fT Cob R1 R1/R2 Test Condition VCB = 50 V, IE = 0 VCE = 50 V, IE = 0 VEB = 6 V, IC = 0 VCE = 5 V, IC = 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 0.1 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz Min 0.37 50 0.7 0.3 1.54 Typ. 0.1 250 3 2.2 0.22 Max 100 500 0.71 0.3 2.5 1.0 2.86 V V V MHz pF k Unit nA nA mA
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Q1
IC - VCE
1.0 Common emitter Ta = 25C 0.8 10000 5000 3000
hFE - IC
Common emitter VCE = 2 V
(A)
5 4 3 2
DC current gain hFE
6 0.6
Collector current IC
1000 500 300
Ta = 100C 25 -25
0.4 1 0.2 IB = 0.5 mA 0 0
100 50 30
1
2
3
4
5
10 0.1
0.3
1
3
10
30
100
300
1000
Collector-emitter voltage
VCE (V)
Collector current IC
(mA)
VCE (sat) - IC
1000 Common emitter 500 I /I = 20 CB 300 50 30 Common emitter IC/IB = 20 Ta = 25C 10 5 3
VBE (sat) - IC
Collector-emitter saturation voltage VCE (sat) (mV)
100 50 30 Ta = 100C -25 25
Base-emitter saturation voltage VBE (sat) (V)
100 300 1000
10 5 3
1 0.5 0.3
1 0.1
0.3
1
3
10
30
0.1 0.1
0.3
1
3
10
30
100
300 500
Collector current IC
(mA)
Collector current IC
(mA)
IC - VBE
1000 500 300 100
Cob - VCB
IE = 0 A f = 1 MHz Ta = 25C
VCE = 2 V
Collector output capacitance Cob (pF)
1.6
Common emitter
50 30
(mA) Collector current IC
100 50 30 Ta = 100C 25 -25
10 5 3
10 5 3
1 0.0
0.4
0.8
1.2
1 0.1
0.3
1
3
10
30
100
Base-emitter voltage
VBE (V)
Collector-base voltage VCB (V)
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Q2
COLLECTOR CURRENT IC (mA)
EMITTER COMMON VCE=0.2V
COLLECTOR CURRENT IC (uA)
EMITTER COMMON VCE=5V
INPUT VOLTAGE
VI(ON) (V)
INPUT VOLTAGE
VI(OFF) (V)
EMITTER COMMON VCE=5V
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat)(V)
DC CURRENT GAIN hFE
EMITTER COMMON IC/IB =20
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
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Q1, Q2 common
PC* - Ta
(mW) COLLECTOR POWER DISSIPATION PC
400
300
200
100
0 0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE
Ta (C)
*:Total rating
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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